2SB558 Transistors Datasheet

2SB558 Datasheet PDF, Equivalent


Part Number

2SB558

Description

Silicon PNP Power Transistors

Manufacture

SavantIC

Total Page 3 Pages
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2SB558
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB558
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For power switching and general
www.DataSheet4Up.cuormpose applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-100
-100
-6
-7
60
150
-65~150
UNIT
V
V
V
A
W

2SB558
SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB558
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
V(BR)CBO
www.DataSheet4U.com
V(BR)EBO
Collector-base breakdown voltage
Emitter-base breakdown voltage
IC=-1mA ;IE=0
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A
ICBO Collector cut-off current
VCB=-100V; IE=0
IEBO Emitter cut-off current
hFE DC current gain
fT Transition frequency
VEB=-6V; IC=0
IC=-1A ; VCE=-5V
IC=-1A ; VCE=-5V
MIN TYP. MAX UNIT
-100
V
-100
-6
V
V
-1.5 V
-0.1 mA
-0.1 mA
40 140
7 MHz
hFE Classifications
RO
40-80
70-140
2


Features SavantIC Semiconductor Product Specific ation Silicon PNP Power Transistors 2 SB558 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS For power switching and general www.Da taSheet4U.com purpose applications PINN ING(see Fig.2) PIN 1 2 3 Base Emitter C ollector Fig.1 simplified outline (TO-3 ) and symbol DESCRIPTION Absolute maxi mum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emit ter-base voltage Collector current Coll ector power dissipation Junction temper ature Storage temperature TC=25 Open em itter Open base Open collector CONDITIO NS VALUE -100 -100 -6 -7 60 150 -65~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Po wer Transistors CHARACTERISTICS Tj=25 u nless otherwise specified PARAMETER Col lector-emitter breakdown voltage Collec tor-base breakdown voltage Emitter-base breakdown voltage Collector-emitter sa turation voltage CONDITIONS IC=-50mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;.
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