2SC3949 Transistors Datasheet

2SC3949 Datasheet PDF, Equivalent


Part Number

2SC3949

Description

Silicon NPN Power Transistors

Manufacture

JMnic

Total Page 3 Pages
Datasheet
Download 2SC3949 Datasheet


2SC3949
JMnic
Silicon NPN Power Transistors
Product Specification
2SC3949
DESCRIPTION
With TO-3PML package
High voltage ,high speed
APPLICATIONS
For TV horizontal output and power
www.DataSheet4U.scwomitching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
PC Collector dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
MAX
850
500
7
15
80
150
-55~150
UNIT
V
V
V
A
W

2SC3949
JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=
V(BR)CBO Collector-base breakdown voltage
www.DataSheet4U.com
V(BR)EBO Emitter-base breakdown voltage
IC=1mA ;IE=0
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=10A ;IB=2A
VBEsat Base-emitter saturation voltage
ICBO Collector cut-off current
IEBO Emitter cut-off current
IC=10A ;IB=2A
VCE=800V; IE=0
TC=100
VEB=6V ;IC=0
hFE DC current gain
IC=10A ; VCE=5V
fT Transition frequency
IC=2A ; VCE=10V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
Product Specification
2SC3949
MIN TYP. MAX UNIT
500 V
850 V
7V
1.0 V
1.5 V
0.1
1.0
mA
0.1 mA
10 30
20 MHz
260 pF
2


Features JMnic Product Specification Silicon NP N Power Transistors 2SC3949 DESCRIPTI ON ¡¤ With TO-3PML package ¡¤ High voltage ,high speed APPLICATIONS ¡¤ F or TV horizontal output and power switc hing applications www.DataSheet4U.com P INNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum r atings (Ta=25¡æ ) SYMBOL VCBO VCEO VE BO IC PC Tj Tstg PARAMETER Collector-ba se voltage Collector-emitter voltage Em itter-base voltage Collector current Co llector dissipation Junction temperatur e Storage temperature TC=25¡æ Open em itter Open base Open collector CONDITIO NS MAX 850 500 7 15 80 150 -55~150 ¡æ ¡æ UNIT V V V A W JMnic Product Sp ecification Silicon NPN Power Transist ors CHARACTERISTICS Tj=25¡æ unless ot herwise specified PARAMETER CONDITIONS MIN TYP. 2SC3949 SYMBOL MAX UNIT V (BR)CEO Collector-emitter breakdown vo ltage IC=10mA ;RBE=¡Þ 500 V V(BR) CBO www.DataSheet4U.com Collector-base breakdown voltage IC=1mA ;IE=0 IE=1mA ;I.
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