BU508AF TRANSISTORS Datasheet

BU508AF Datasheet PDF, Equivalent


Part Number

BU508AF

Description

NPN POWER TRANSISTORS

Manufacture

CDIL

Total Page 3 Pages
Datasheet
Download BU508AF Datasheet


BU508AF
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN POWER TRANSISTORS
IS/ISO 9002
Lic# QSC/L- 000019.2
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
B
www.DataSCheet4U.com
E
Fast Switching, High Voltage Devices for use in Horizontal Deflection Circuits of Colour TV
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector -Emitter Voltage
Collector -Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current
Total Power Dissipation upto Ta=25º C
Tc=25º C
Storage Temperature Range
Max Operating Junction Temperature
SYMBOL
VCES
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
VALUE
1500
700
5
8
15
34
60
- 65 to +150
150
UNIT
V
V
V
A
W
ºC
ºC
THERMAL RESISTANCE
Thermal Resistance Junction - Case
Rth (j-c)
2.08
ºC/W
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
.
DESCRIPTION
SYMBOL TEST CONDITIONS
Collector Cut off Current
Collector Emitter Sustaining Voltage
ICES
VCEO (sus)*
VCE=VCES, VBE=0
IB =0, IC=100mA
Emitter Base Voltage
VEBO
IE=10mA, IC =0
BU508F, AF
Emitter Cut-off Current
IEBO
VEB=5V, IC=0
BU508DF
DC Current Gain
hFE IC=4.5A, VCE=5V
Diode forward Voltage
VF IF=4.0A
BU508DF
Collector Emitter Saturation Voltage
VCE(sat) *
IC=4.5A, IB=2.0A
BU508AF, DF
IC=4.5A, IB=2.0A
BU508F
Base Emitter Saturation Voltage
VBE(sat) *
IC=4.5A, IB=2.0A
MIN
700
5.0
2.25
SWITCHING TIME
Storage Time
Fall Time
ts IC=4.5A,hFE=2.5,VCC=140V
tf LC=0.9mH, LB=3µH
* Pulse test: Pulse Duration <300µs , Duty cycle < 1.5%.
Continental Device India Limited
Data Sheet
TYP
7.0
0.5
MAX
1.0
300
UNIT
mA
V
V
mA
2.0 V
1.0 V
5.0 V
1.5 V
µs
µs
Page 1 of 3

BU508AF
A
www.DataSheet4U.com E
S
F
1
2
3
K
PP
BU508F, BU508AF,
BU508DF
TO- 3P Fully Isolated
Plastic Package
TO-3P (TO-218) Plastic Package
DB
C
G
H
L
M
N
DIM MIN MAX
A 15.80 16.40
B 5.20 5.70
C 3.80 4.20
D Ø 3.30 Ø 3.60
E 14.50 15.10
F 33.25 36.75
G 20.75 21.25
H 11.50 12.25
K 1.00 1.30
L 18.75 21.65
M 0.40 0.60
N 3.15 3.45
P 5.21 5.72
S 18.75 19.25
All diminsions in mm.
1
2
3
Pin Configuration
1. Base
2. Collector
3. Emitter
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-3P
100 pcs/polybag 628 gm/100 pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
0.3K
OUTER CARTON BOX
Size
Qty Gr Wt
17" x 15" x 13.5"
4.8K 42 kgs
Continental Device India Limited
Data Sheet
Page 2 of 3


Features Continental Device India Limited An IS/I SO 9002 and IECQ Certified Manufacturer IS/ISO 9002 Lic# QSC/L- 000019.2 NPN POWER TRANSISTORS BU508F, BU508AF, BU 508DF TO- 3P Fully Isolated Plastic Pac kage www.DataSheet4U.com C B E Fast Switching, High Voltage Devices for us e in Horizontal Deflection Circuits of Colour TV ABSOLUTE MAXIMUM RATINGS DESC RIPTION Collector -Emitter Voltage Coll ector -Emitter Voltage Emitter Base Vol tage Collector Current Collector Peak C urrent Total Power Dissipation upto Ta= 25º C Tc=25º C Storage Temperature Ra nge Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance J unction - Case SYMBOL VCES VCEO VEBO IC ICM Ptot Tstg Tj VALUE 1500 700 5 8 15 34 60 - 65 to +150 150 UNIT V V V A W ºC ºC Rth (j-c) 2.08 ºC/W ELECTR ICAL CHARACTERISTICS (TC=25ºC unless s pecified otherwise) . TEST CONDITIONS D ESCRIPTION SYMBOL ICES VCE=VCES, VBE=0 Collector Cut off Current VCEO (sus)* I B =0, IC=100mA Collector Emitter Sustaining Voltage VEBO IE=10mA, IC .
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