2SK4107 MOSFET Datasheet

2SK4107 Datasheet PDF, Equivalent


Part Number

2SK4107

Description

N-Channel MOSFET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
PDF Download
Download 2SK4107 Datasheet PDF


2SK4107
2SK4107
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4107
Switching Regulator Applications
Unit: mm
Low drainsource ON resistance : RDS (ON) = 0. 33 Ω (typ.)
High forward transfer admittance : |Yfs| = 8.5 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)
Enhancement mode
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: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drainsource voltage
Draingate voltage (RGS = 20 k)
Gatesource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
500
500
±30
15
60
150
765
15
15
150
55~150
Unit
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.78 mH, RG = 25 , IAR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-02-22

2SK4107
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
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Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 7.0 A
VDS = 10 V, ID = 7.0 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
tr
Switching time
Turn-on time
Fall time
ton
tf
Turn-off time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
toff
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 15 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 15 A, VGS = 0 V
IDR = 15 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4107
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.33 0.4
4.0 8.5
— 2450 —
— 15 —
— 220 —
μA
V
μA
V
V
Ω
S
pF
— 50 —
— 90 —
ns
— 45 —
— 175 —
— 48 —
— 26 —
— 22 —
nC
Min Typ. Max Unit
— — 15 A
— — 60 A
— — 1.7 V
— 1050 —
ns
— 13 — μC
TOSHIBA
K4107
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2007-02-22


Features 2SK4107 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4107 ○ Switching Regulator Applic ations • • • • Low drain−sour ce ON resistance Low leakage current En hancement mode : RDS (ON) = 0. 33 Ω (t yp.) Unit: mm High forward transfer ad mittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2 .0~4.0 V (VDS = 10 V, ID = 1 mA) www.D ataSheet4U.com Absolute Maximum Rating s (Ta = 25°C) Characteristic Drain−s ource voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR V GSS ID IDP PD EAS IAR EAR Tch Tstg Rati ng 500 500 ±30 15 60 150 765 15 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SO URCE Pulse (Note 1) Drain power dissi pation (Tc = 25°C) Single-pulse avalan che energy (Note 2) Avalanche current R epetitive avalanche energy (Note 3) Cha nnel temperature Storage temperature ra nge JEDEC JEITA TOSHIBA ― ― 2-16C1B Weight: 4.6 g (typ.) Note: Using continuously under h.
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