2SK4108 FET Datasheet

2SK4108 Datasheet PDF, Equivalent


Part Number

2SK4108

Description

Silicon N-Channel MOS Type FET

Manufacture

Toshiba Semiconductor

Total Page 6 Pages
Datasheet
Download 2SK4108 Datasheet


2SK4108
2SK4108
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
2SK4108
Switching Regulator Applications
Unit: mm
z Low drainsource ON resistance : RDS (ON) = 0. 21Ω (typ.)
z High forward transfer admittance : |Yfs| = 14 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 500 V)
z Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
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Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS 500 V
Draingate voltage (RGS = 20 k)
VDGR
500
V
Gatesource voltage
VGSS ±30 V
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
ID
IDP
PD
EAS
20 A
80 A
150 W
960 mJ
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
20
15
150
55~150
A
mJ
°C
°C
JEDEC
JEITA
TOSHIBA
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon
reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (chc)
Rth (cha)
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.08 mH, RG = 25 Ω, IAR = 20 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2007-06-29

2SK4108
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Gate leakage current
Gatesource breakdown voltage
Drain cutoff current
Drainsource breakdown voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
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Reverse transfer capacitance
Output capacitance
IGSS
V (BR) GSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
IG = ±10 μA, VDS = 0 V
VDS = 500 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 10 A
VDS = 10 V, ID = 10 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
Rise time
Switching time
Turn on time
Fall time
Turn off time
tr
ton
tf
toff
VGS 10 V
0V
ID = 10A
出力
RL = 20 Ω
VDD ∼− 200 V
Duty <= 1%, tw = 10 μs
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“Miller”) charge
Qg
Qgs VDD 400 V, VGS = 10 V, ID = 20 A
Qgd
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 20 A, VGS = 0 V
IDR = 20 A, VGS = 0 V
dIDR / dt = 100 A / μs
Marking
2SK4108
Min Typ. Max Unit
— — ±10
±30 —
— — 100
500 —
2.0 — 4.0
— 0.21 0.27
4.0 14
— 3400 —
— 25 —
— 320 —
μA
V
μA
V
V
Ω
S
pF
— 70 —
— 130 —
— 70 —
ns
— 280 —
— 70 —
— 45 —
— 25 —
nC
Min Typ. Max Unit
— — 20 A
— — 80 A
— — 1.7 V
— 1300 —
ns
— 20 — μC
TOSHIBA
K4108
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2007-06-29


Features 2SK4108 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) 2SK4108 Switching Regulator Applicatio ns z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode www .DataSheet4U.com Unit: mm : RDS (ON) = 0. 21Ω (typ.) : |Yfs| = 14 S (typ.) : IDSS = 100 μA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA ) Absolute Maximum Ratings (Ta = 25°C ) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) G ate−source voltage Drain current DC ( Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ± 30 20 80 150 960 20 15 150 −55~150 Un it V V V A A W mJ A mJ °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse ( Note 1) Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (N ote 2) Avalanche current Repetitive ava lanche energy (Note 3) Channel temperat ure Storage temperature range JEDEC JE ITA TOSHIBA ― ― 2-16C1B Note: Using continuously under heavy loads (e.g. the appl.
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