High power NPN epitaxial planar bipolar transistor
Description
2STW4466
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = www.DataSheet4U.com ■ Complementary to 2STW1693 ■ ■
80 V
Typical ft = 20 MHz Fully characterized at 125 oC
Applications
■
3 2 1
Audio power amplifier TO-247
Description
The device is a NPNtransistor manufactured in low voltage planar technology using b...
