2N5872 Transistor Datasheet

2N5872 Datasheet, PDF, Equivalent


Part Number

2N5872

Description

(2N5871 / 2N5872) Silicon PNP Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N5872 Datasheet


2N5872
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N5871 2N5872
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
2N5871
2N5872
VCEO
Collector-emitter voltage
2N5871
2N5872
VEBO
Emitter-base voltage
IC Collector current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-60
-80
-60
-80
-5
-7
115
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W

2N5872
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N5871 2N5872
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5871
2N5872
IC=-0.1A ;IB=0
VCEsat Collector-emitter saturation voltage
IC=-5A;IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO Collector cut-off current
VCB=ratedVCBO; IB=0
ICEO Collector cut-off current
2N5871 VCE=-30V; IB=0
2N5872 VCE=-40V; IB=0
IEBO Emitter cut-off current
hFE DC current gain
fT Trainsistion frequency
VEB=-5V; IC=0
IC=-2.5A ; VCE=-4V
IC=-0.5A ; VCE=-10V
MIN TYP. MAX UNIT
-60
V
-80
-1.0 V
-1.5 V
-1.0 mA
-2.0 mA
-1.0 mA
20 100
4 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2N5871 2N5872 DESCR IPTION ·With TO-3 package ·Low collec tor saturation voltage APPLICATIONS ·F or medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Em itter Collector Fig.1 simplified outlin e (TO-3) and symbol DESCRIPTION Absolu te maximum ratings(Ta= ) SYMBOL VCBO PA RAMETER 2N5871 Collector-base voltage 2 N5872 2N5871 VCEO VEBO IC PD Tj Tstg Co llector-emitter voltage 2N5872 Emitter- base voltage Collector current Total Po wer Dissipation Junction temperature St orage temperature TC=25 Open collector Open base -80 -5 -7 115 150 -65~200 V A W Open emitter -80 -60 V CONDITIONS VA LUE -60 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resis tance junction to case VALUE 1.17 UNIT /W SavantIC Semiconductor www.DataShee t4U.com Product Specification Silicon PNP Power Transistors 2N5871 2N5872 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5871 .
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