2N5870 Transistor Datasheet

2N5870 Datasheet, PDF, Equivalent


Part Number

2N5870

Description

(2N5869 / 2N5870) Silicon NPN Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N5870 Datasheet


2N5870
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N5869 2N5870
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
APPLICATIONS
·For medium-speed switching and
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N5869
2N5870
Open emitter
VCEO
Collector-emitter voltage
2N5869
2N5870
Open base
VEBO
IC
PD
Emitter-base voltage
Collector current
Total Power Dissipation
Open collector
TC=25
Tj Junction temperature
Tstg Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
60
80
60
80
5
5
87.5
150
-65~200
UNIT
V
V
V
A
W
VALUE
1.17
UNIT
/W

2N5870
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N5869 2N5870
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N5869
2N5870
IC=0.1A ;IB=0
60
80
V
VCEsat Collector-emitter saturation voltage
IC=5A;IB=1A
VBEsat Base-emitter saturation voltage
IC=5A; IB=1A
ICBO Collector cut-off current
VCB=ratedVCBO; IB=0
ICEO Collector cut-off current
2N5869 VCE=30V; IB=0
2N5870 VCE=40V; IB=0
1.0 V
1.5 V
1.0 mA
2.0 mA
IEBO Emitter cut-off current
hFE DC current gain
fT Trainsistion frequency
VEB=5V; IC=0
IC=1.5A ; VCE=4V
IC=0.5A ; VCE=10V;f=1MHz
20
4
1.0 mA
100
MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N5869 2N5870 DESCR IPTION ·With TO-3 package ·Low collec tor saturation voltage APPLICATIONS ·F or medium-speed switching and amplifier applications PINNING PIN 1 2 3 Base Em itter Collector Fig.1 simplified outlin e (TO-3) and symbol DESCRIPTION Absolu te maximum ratings(Ta= ) SYMBOL PARAMET ER 2N5869 VCBO Collector-base voltage 2 N5870 2N5869 VCEO Collector-emitter vol tage 2N5870 VEBO IC PD Tj Tstg Emitter- base voltage Collector current Total Po wer Dissipation Junction temperature St orage temperature TC=25 Open collector Open base 80 5 5 87.5 150 -65~200 V A W Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT THERMAL CHARACTERISTICS SYMB OL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT /W S avantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N5869 2N5870 CHARA CTERISTICS Tj=25 unless otherwise specified PARAMETER 2N5869 IC=0..
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