2N6247 Transistor Datasheet

2N6247 Datasheet, PDF, Equivalent


Part Number

2N6247

Description

(2N6246 - 2N6248) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6247 Datasheet


2N6247
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
Product Specification
2N6246 2N6247 2N6248
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6246
VCBO
Collector-base voltage
2N6247
2N6248
2N6246
VCEO
Collector-emitter voltage 2N6247
2N6248
VEBO
IC
IB
PT
Tj
Tstg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
-70
-90
-110
-60
-80
-100
-5
-15
-5
125
150
-65~200
UNIT
V
V
V
A
A
W
VALUE
1.4
UNIT
/W

2N6247
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2N6246 2N6247 2N6248
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6246
2N6247
2N6248
IC=-0.2A ;IB=0
VCEsat-1
VCEsat-2
VBE
ICEO
ICEX
IEBO
Collector-emitter
saturation voltage
2N6246
2N6247
2N6248
Collector-emitter
saturation voltage
2N6246
2N6247
2N6248
Base-emitter
on voltage
2N6246
2N6247
2N6248
Collector cut-off current
Collector
cut-off current
2N6246
2N6247
2N6248
Emitter
cut-off current
2N6246
2N6247
2N6248
IC=-7A; IB=-0.7A
IC=-6A; IB=-0.6A
IC=-5A; IB=-0.5A
IC=-15A; IB=-3A
IC=-15A; IB=-4A
IC=-10A; IB=-2A
IC=-7A ; VCE=-4V
IC=-6A ; VCE=-4V
IC=-5A ; VCE=-4V
VCE=1/2Rated VCEO; IB=0
VCE=-65V; VBE=-1.5V
VCE=-55V; VBE=-1.5V TC=150
VCE=-85V; VBE=-1.5V
VCE=-70V; VBE=-1.5V TC=150
VCE=-100V; VBE=-1.5V
VCE=-90V; VBE=-1.5V TC=150
VEB=-5V; IC=0
hFE-1
hFE-2
DC current gain
DC current gain
2N6246
2N6247
2N6248
2N6246
2N6247
2N6248
IC=-7A ; VCE=-4V
IC=-6A ; VCE=-4V
IC=-5A ; VCE=-4V
IC=-15A ; VCE=-4V
IC=-15A ; VCE=-4V
IC=-10A ; VCE=-4V
MIN
-60
-80
-100
TYP.
MAX UNIT
V
-1.3 V
-2.5
V
-3.5
-2.0
-1.8 V
-1.8
-1.0 mA
-0.2
-5.0
-0.2
-5.0
mA
-0.2
-5.0
-5.0
mA
-1.0
20 100
5
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -3 package ·Low collector saturation v oltage ·Excellent safe operating area ·High gain at high current APPLICATION S ·General-purpose types of switching and linear-amplifier applications PINNI NG PIN 1 2 3 Base Emitter Collector DES CRIPTION 2N6246 2N6247 2N6248 Fig.1 s implified outline (TO-3) and symbol Ab solute maximum ratings(Ta= ) SYMBOL PAR AMETER 2N6246 VCBO Collector-base volta ge 2N6247 2N6248 2N6246 VCEO Collector- emitter voltage 2N6247 2N6248 VEBO IC I B PT Tj Tstg Emitter-base voltage Colle ctor current Base current Total power d issipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -70 -90 -110 -60 -80 -100 -5 -15 -5 125 150 -65~200 V A A W V V UNIT THERMAL CHAR ACTERISTICS SYMBOL Rth j-c PARAMETER Th ermal resistance junction to case VALUE 1.4 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Sp.
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