2N6383 Transistor Datasheet

2N6383 Datasheet, PDF, Equivalent


Part Number

2N6383

Description

(2N6383 - 2N6385) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6383 Datasheet


2N6383
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6383 2N6384 2N6385
DESCRIPTION
·With TO-3 package
·Complement to type 2N6648/6649/6650
·DARLINGTON
·High DC current gain
APPLICATIONS
·Designed for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
1
2
3
DESCRIPTION
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
2N6383
VCBO
Collector-base voltage 2N6384
2N6385
2N6383
VCEO
Collector-emitter voltage 2N6384
2N6385
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Collector current-peak
Base current
PD Total Power Dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
40
60
80
40
60
80
5
10
15
0.25
100
200
-65~200
UNIT
V
V
V
A
A
A
W
VALUE
1.75
UNIT
/W

2N6383
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2N6383 2N6384 2N6385
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6383
2N6384 IC=0.2A ;IB=0
2N6385
40
60
80
V
VCEsat-1 Collector-emitter saturation voltage IC=5A; IB=10mA
VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=100mA
VBE-1
Base-emitter on voltage
IC=5A ; VCE=3V
VBE-2
Base-emitter on voltage
IC=10A ; VCE=3V
2N6383 VCE=40V; IB=0
ICEO Collector cut-off current 2N6384 VCE=60V; IB=0
2N6385 VCE=80V; IB=0
2N6383
VCE=40V; VBE=-1.5V
TC=125
ICEX
Collector cut-off current 2N6384
VCE=60V; VBE=-1.5V
TC=125
2N6385
VCE=80V; VBE=-1.5V
TC=125
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=5A ; VCE=3V
hFE-2
DC current gain
IC=10A ; VCE=3V
COB Output capacitance
IE=0; VCB=10V;f=1MHz
1000
100
2.0 V
3.0 V
2.8 V
4.5 V
1.0 mA
0.3
3.0
0.3
3.0
mA
0.3
3.0
10 mA
20000
200 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·Complement to type 2N6648/ 6649/6650 ·DARLINGTON ·High DC curren t gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series re gulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6383 2N6384 2 N6385 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta = ) SYMBOL PARAMETER 2N6383 VCBO Collec tor-base voltage 2N6384 2N6385 2N6383 V CEO Collector-emitter voltage 2N6384 2N 6385 VEBO IC ICM IB PD Tj Tstg Emitter- base voltage Collector current Collecto r current-peak Base current Total Power Dissipation Junction temperature Stora ge temperature TC=25 Open collector Ope n base Open emitter CONDITIONS VALUE 40 60 80 40 60 80 5 10 15 0.25 100 200 -6 5~200 V A A A W V V UNIT THERMAL CHARA CTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to c.
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