2N6465 Transistor Datasheet

2N6465 Datasheet, PDF, Equivalent


Part Number

2N6465

Description

(2N6465 / 2N6466) Silicon Power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2N6465 Datasheet


2N6465
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
Product Specification
2N6465 2N6466
DESCRIPTION
·With TO-66 package
·Excellent safe operating area
·Complement to type 2N6467 2N6468
APPLICATIONS
·For use in audio amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2N6465
2N6466
Open emitter
VCEO
Collector-emitter voltage
2N6465
2N6466
Open base
VEBO
IC
PD
Emitter-base voltage
Collector current
Total power dissipation
Open collector
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
110
130
100
120
5
4
40
150
-65~150
UNIT
V
V
V
A
W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
2.5
UNIT
/W

2N6465
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6465
2N6466
IC=50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.15A
VBE Base-emitter on voltage
IC=1.5A ; VCE=4V
2N6465 VCB=110V; IE=0
ICBO Collector cut-off current
2N6466 VCB=130V; IE=0
2N6465 VCE= 100V,IB=0
ICEO Collector cut-off current
2N6466 VCE= 120V,IB=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1.5A ; VCE=4V
fT Transition frequency
IC=0.5A ; VCE=10V
Product Specification
2N6465 2N6466
MIN TYP. MAX UNIT
100
V
120
1.2 V
1.5 V
10 µA
100 µA
10 µA
15 150
5 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2N6465 2N6466 DESCR IPTION ·With TO-66 package ·Excellent safe operating area ·Complement to ty pe 2N6467 2N6468 APPLICATIONS ·For use in audio amplifier applications PINNIN G(see Fig.2) PIN 1 2 3 Base Emitter Col lector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maxim um ratings(Ta= ) SYMBOL PARAMETER 2N646 5 VCBO Collector-base voltage 2N6466 2N 6465 VCEO Collector-emitter voltage 2N6 466 VEBO IC PD Tj Tstg Emitter-base vol tage Collector current Total power diss ipation Junction temperature Storage te mperature TC=25 Open collector Open bas e 120 5 4 40 150 -65~150 V A W Open emi tter 130 100 V CONDITIONS VALUE 110 V U NIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junct ion to case VALUE 2.5 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Pro duct Specification Silicon NPN Power T ransistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMET.
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