www.DataSheet4U.com
RJK0303DPB
Silicon N Channel Power MOS FET Power Switching
REJ03G1341-0600 Rev.6.00 Apr 19, 2006
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 D 5 4 G 3...
