POWER TRANSISTOR. 2SB506 Datasheet

2SB506 TRANSISTOR. Datasheet pdf. Equivalent


SavantIC 2SB506
SavantIC Semiconductor
wSwiwl.iDcatoaSnheePt4NU.cPomPower Transistors
DESCRIPTION
·With TO-3 package
·Wide area of safe operation
APPLICATIONS
·Low frequency power amplification
·Power switching application
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SB506
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
-150
-100
-7
-5
60
100
-55~100
UNIT
V
V
V
A
W


2SB506 Datasheet
Recommendation 2SB506 Datasheet
Part 2SB506
Description SILICON POWER TRANSISTOR
Feature 2SB506; SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SB506 Datasheet




SavantIC 2SB506
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB506
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA; IB=0
-100
V
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
-7 V
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
-1.0 V
VBEsat
Base-emitter saturation voltage
IC=-5A; IB=-0.5A
-1.5 V
ICBO Collector cut-off current
VCB=-100V; IE=0
-0.1 mA
IEBO Emitter cut-off current
VEB=-7V; IC=0
-0.1 mA
hFE DC current gain
IC=-1A ; VCE=-5V
35 200
fT Transition frequency
IC=-0.3A ; VCE=-10V
20 MHz
2



SavantIC 2SB506
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SB506
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3







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