2SB1371 TRANSISTOR Datasheet

2SB1371 Datasheet PDF, Equivalent


Part Number

2SB1371

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SB1371 Datasheet


2SB1371
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PFa package
·Complement to type 2SD2064
·High transition frequency
·Satisfactory linearity of hFE
APPLICATIONS
·For high power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1371
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
Collector-emitter voltage
Emitter-base voltage
IC Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-120
-120
-5
-6
-10
70
3
150
-55~150
UNIT
V
V
V
A
A
W

2SB1371
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
Product Specification
2SB1371
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEsat
VBE
ICBO
IEBO
hFE-1
hFE -2
hFE -3
COB
fT
Collector-emitter saturation voltage IC=-4A ;IB=-0.4A
Base-emitter on voltage
IC=-4A ; VCE=-5V
Collector cut-off current
VCB=-120V; IE=0
Emitter cut-off current
VEB=-3V; IC=0
DC current gain
IC=-20mA ; VCE=-5V
DC current gain
IC=-1A ; VCE=-5V
DC current gain
IC=-4A ; VCE=-5V
Output capacitance
IE=0 ; VCB=-10V;f=1.0MHz
Transition frequency
IC=-0.5A ; VCE=-5V;f=1.0MHz
-2.0 V
-1.8 V
-50 µA
-50 µA
20
60 200
20
150 pF
15 MHz
hFE-2 classifications
QS
P
60-120
80-160 100-200
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO -3PFa package ·Complement to type 2SD2 064 ·High transition frequency ·Satis factory linearity of hFE APPLICATIONS For high power amplification PINNING P IN 1 2 3 Base Collector Emitter DESCRIP TION 2SB1371 Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM P ARAMETER Collector-base voltage Collect or-emitter voltage Emitter-base voltage Collector current Collector current-pe ak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Sto rage temperature 3 150 -55~150 Open emi tter Open base Open collector CONDITION S VALUE -120 -120 -5 -6 -10 70 W UNIT V V V A A SavantIC Semiconductor www.Da taSheet4U.com Product Specification S ilicon PNP Power Transistors CHARACTERI STICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collect or cut-off current Emitter cut-off current DC current gain DC curren.
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