2SB1375 TRANSISTOR Datasheet

2SB1375 Datasheet PDF, Equivalent


Part Number

2SB1375

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
PDF Download
Download 2SB1375 Datasheet PDF


2SB1375
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220F package
·Complement to type 2SD2012
·Low collector saturation voltage:
VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A
·Collector power dissipation:
PC=25W(TC=25 )
APPLICATIONS
·Audio frequency power amplifier
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Product Specification
2SB1375
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collector dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
-60
-60
-7
-3
-0.5
2.0
25
150
-55~150
UNIT
V
V
V
A
A
W

2SB1375
SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A
VBE Base-emitter voltage
IC=-0.5A;VCE=-5V
ICBO Collector cut-off current
VCB=-60V; IE=0
IEBO
hFE-1
Emitter cut-off current
DC current gain
VEB=-7V; IC=0
IC=-0.5A ; VCE=-5V
hFE-2
DC current gain
IC=-2A ; VCE=-5V
fT Transition frequency
IC=-0.5A ; VCE=-5V
COB Collector output capacitance
IE=0; f=1MHz;VCB=-10V
Product Specification
2SB1375
MIN TYP. MAX UNIT
-60 V
-1.0 -1.5
V
-0.75 -1.0
V
-10 µA
-10 µA
100 320
15
9 MHz
50 pF
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturatio n voltage: VCE(SAT)=-1.5V(Max) at IC=-2 A,IB=-0.2A ·Collector power dissipatio n: PC=25W(TC=25 ) APPLICATIONS ·Audio frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simpl ified outline (TO-220F) and symbol DESC RIPTION Absolute maximum ratings (Ta=2 5 ) SYMBOL VCBO VCEO VEBO IC IB PARAMET ER Collector-base voltage Collector-emi tter voltage Emitter-base voltage Colle ctor current Base current Ta=25 PC Coll ector dissipation TC=25 Tj Tstg Junctio n temperature Storage temperature 25 15 0 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -3 -0.5 2.0 W UNIT V V V A A SavantIC Se miconductor www.DataSheet4U.com Produc t Specification Silicon PNP Power Tran sistors CHARACTERISTICS Tj=25 unless ot herwise specified PARAMETER Collector-emitter breakdown voltage Coll.
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