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AP9915H. 9915H Datasheet

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AP9915H. 9915H Datasheet






9915H AP9915H. Datasheet pdf. Equivalent




9915H AP9915H. Datasheet pdf. Equivalent





Part

9915H

Description

AP9915H



Feature


www.DataSheet4U.com AP9915H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advance d Power Electronics Corp. ▼ Low on-re sistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D BVDSS RDS(ON) ID 2 0V 50mΩ 20A Description The Advanced Power MOSFETs from APEC provide the des igner with the best combination of fast switching, ruggedized devi.
Manufacture

Advanced Power Electronics

Datasheet
Download 9915H Datasheet


Advanced Power Electronics 9915H

9915H; ce design, ultra low on-resistance and c ost-effectiveness. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Rati ngs Symbol VDS VGS ID@TC=25℃ ID@TC=12 5℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltag e Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pu lsed Drain Current 1 Rating 20 ± 12 2 0 16 41 26 0.2 -55 to 150.


Advanced Power Electronics 9915H

-55 to 150 Units V V A A A W W/ ℃ ℃ Total Power Dissipation Linear D erating Factor Storage Temperature Rang e Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Para meter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max . Max. Value 4.8 110 Unit ℃/W ℃/W Data and specifications subject to chan ge without notice 200218032.


Advanced Power Electronics 9915H

www.DataSheet4U.com AP9915H/J Electr ical Characteristics@Tj=25oC(unless oth erwise specified) Symbol BVDSS ΔBVDSS/ ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250 uA Min. 20 0.5 - Typ. 0.03 13 7.5 0.9 4 4.5 49.5 12 6 195 126 50 Max. Units 50 80 1.2 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Tem.

Part

9915H

Description

AP9915H



Feature


www.DataSheet4U.com AP9915H/J N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advance d Power Electronics Corp. ▼ Low on-re sistance ▼ Capable of 2.5V gate drive ▼ Low drive current ▼ Single Drive Requirement G S D BVDSS RDS(ON) ID 2 0V 50mΩ 20A Description The Advanced Power MOSFETs from APEC provide the des igner with the best combination of fast switching, ruggedized devi.
Manufacture

Advanced Power Electronics

Datasheet
Download 9915H Datasheet




 9915H
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP9915H/J
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Single Drive Requirement
Description
G
D
S
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BVDSS
RDS(ON)
ID
20V
50mΩ
20A
GD S
TO-252(H)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=125
IDM
PD@TC=25
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
GD
S
TO-251(J)
Rating
20
± 12
20
16
41
26
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/
Max.
Max.
Value
4.8
110
Unit
/W
/W
Data and specifications subject to change without notice
200218032




 9915H
AP9915H/J
www.DataSheet4U.com
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance VGS=4.5V, ID=6A
VGS=2.5V, ID=5.2A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=125oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=VGS, ID=250uA
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS= ± 12V
ID=10A
VDS=20V
VGS=5V
VDS=10V
ID=10A
RG=3.3Ω,VGS=5V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=1Ω
VGS=0V
VDS=20V
f=1.0MHz
20 - - V
- 0.03 - V/
- - 50 mΩ
- - 80 mΩ
0.5 - 1.2 V
- 13 -
S
- - 1 uA
- - 25 uA
- - ±100 nA
- 7.5 - nC
- 0.9 - nC
- 4 - nC
- 4.5 - ns
- 49.5 - ns
- 12 - ns
- 6 - ns
- 195 - pF
- 126 - pF
- 50 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.3V
Tj=25, IS=20A, VGS=0V
Min. Typ. Max. Units
- - 20 A
- - 41 A
- - 1.3 V
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.




 9915H
www.DataSheet4U.com
AP9915H/J
50
T C =25 o C
40
4.5V
30
3.5V
20
2.5V
10
V GS =1.5V
0
0123456
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
40
T C =150 o C
30
20
4.5V
3.5V
2.5V
10
V GS =1.5V
0
01234567
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
60
ID=6A
T C =25 o C
50
40
30
123456
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
1.8
I D =6A
1.6
V GS =4.5V
1.4
1.2
1.0
0.8
0.6
-50
0 50 100
T j , Junction Temperature ( o C)
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature






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