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POWER TRANSISTOR. 2SC1516 Datasheet

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POWER TRANSISTOR. 2SC1516 Datasheet






2SC1516 TRANSISTOR. Datasheet pdf. Equivalent




2SC1516 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SC1516

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1516 ·Wit DESCR IPTION With TO-220 package ·Low collec tor saturation voltage APPLICATIONS ·F or medium power amplifer applicatons PI NNING PIN 1 2 3 Base Collector;connecte d to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBO L VCBO VCEO VEBO IC I.
Manufacture

SavantIC

Datasheet
Download 2SC1516 Datasheet


SavantIC 2SC1516

2SC1516; CM PC Tj Tstg PARAMETER Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collector current Collec tor current-peak Collector power dissip ation Junction temperature Storage temp erature TC=25 Open emitter Open base Op en collector CONDITIONS VALUE 35 35 5 1 .5 3.0 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U .com Product Spec.


SavantIC 2SC1516

ification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdow n voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut- off current DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1 mA ,IC=0 IC=1A; IB.


SavantIC 2SC1516

=0.1A IC=1A; IB=0.1A VCB=35V; IE=0 VEB=5 V; IC=0 IC=0.5A ; VCE=2V IC=0.2A ; VCE= 10V 60 MIN 35 5 2SC1516 SYMBOL V(BR)C EO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V 2.0 1.5 20 20 200 110 V V µA µA MHz hFE Classif ications B 60-120 C 100-200 2 SavantI C Semiconductor www.DataSheet4U.com Pr oduct Specification Silicon NPN Power Transistors PACKAGE .

Part

2SC1516

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC1516 ·Wit DESCR IPTION With TO-220 package ·Low collec tor saturation voltage APPLICATIONS ·F or medium power amplifer applicatons PI NNING PIN 1 2 3 Base Collector;connecte d to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBO L VCBO VCEO VEBO IC I.
Manufacture

SavantIC

Datasheet
Download 2SC1516 Datasheet




 2SC1516
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
With TO-220 package
·Low collector saturation voltage
APPLICATIONS
·For medium power amplifer applicatons
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC1516
·Wit
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
PC
Tj
Emitter-base voltage
Collector current
Collector current-peak
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
35
35
5
1.5
3.0
10
150
-55~150
UNIT
V
V
V
A
A
W




 2SC1516
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.1A
ICBO Collector cut-off current
IEBO Emitter cut-off current
VCB=35V; IE=0
VEB=5V; IC=0
hFE DC current gain
IC=0.5A ; VCE=2V
fT Transition frequency
IC=0.2A ; VCE=10V
hFE Classifications
BC
60-120
100-200
Product Specification
2SC1516
MIN TYP. MAX UNIT
35 V
5V
2.0 V
1.5 V
20 µA
20 µA
60 200
110 MHz
2




 2SC1516
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
PACKAGE OUTLINE
Product Specification
2SC1516
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3



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