POWER TRANSISTOR. 2SC2564 Datasheet

2SC2564 TRANSISTOR. Datasheet pdf. Equivalent

Part 2SC2564
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2S.
Manufacture SavantIC
Datasheet
Download 2SC2564 Datasheet



2SC2564
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With MT-200 package
·Complement to type 2SA1094
·High transition frequency
APPLICATIONS
·For power amplifier applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2564
Fig.1 simplified outline (MT-200) and symbol
Absolute maximum ratings (Ta=25°C)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
IB Base current
PC Collectorl power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
5
12
1.2
150
150
-55~150
UNIT
V
V
V
A
A
W



2SC2564
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A; IB=0.5 A
VBE Base-emitter on voltage
IC=5A ; VCE=5V
ICBO Collector cut-off current
VCB=140V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Product Specification
2SC2564
MIN TYP. MAX UNIT
140 V
5V
2.0 V
2.0 V
50 µA
50 µA
55 240
40
80 MHz
hFE-1 classifications
ROY
55-110 80-160 120-240
2





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