2SC2768 POWER TRANSISTOR Datasheet

2SC2768 Datasheet, PDF, Equivalent


Part Number

2SC2768

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC2768 Datasheet


2SC2768
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2768
DESCRIPTION
·With TO-220C package
·High speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance junction case
VALUE
250
200
7
6
1.5
40
150
-55~150
UNIT
V
V
V
A
A
W
MAX
3.0
UNIT
/W

2SC2768
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC2768
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 200 V
V(BR)CBO Collector-base breakdown voltage
IC=100µA ; IE=0
250
V
V(BR)EBO Emitter-base breakdown voltage
IE=100µA ; IC=0
7
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.8A
0.5 V
VBEsat
Base-emitter saturation voltage
IC=2A; IB=0.8A
1.2 V
ICBO Collector cut-off current
VCB=250V ;IE=0
100 µA
IEBO Emitter cut-off current
VEB=7V; IC=0
100 µA
hFE DC current gain
IC=1A ; VCE=5V
20
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IC=4A; IB1=-IB2=-0.4A
RL=20A
1.0 µs
2.0 µs
1.0 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2768 DESCRIPTION ·With TO-220C package ·High speed sw itching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic ge nerators ·High frequency inverters ·G eneral purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Abso lute maximum ratings(Ta=25 ) SYMBOL VCB O VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitte r voltage Emitter-base voltage Collecto r current Base current Collector power dissipation Junction temperature Storag e temperature TC=25 Open emitter Open b ase Open collector CONDITIONS VALUE 250 200 7 6 1.5 40 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL R th j-C PARAMETER Thermal resistance jun ction case MAX 3.0 UNIT /W SavantIC Se miconductor www.DataSheet4U.com Produc t Specification Silicon NPN Power Tran sistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Col.
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