2SC2788 POWER TRANSISTOR Datasheet

2SC2788 Datasheet, PDF, Equivalent


Part Number

2SC2788

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2788 Datasheet


2SC2788
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High breakdown voltage
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·For switching regulator applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC2788
Fig.1 simplified outline (TO-3PN) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
Ta=25
TC=25
VALUE
500
400
7
8
16
3
2.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC2788
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A ;IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A ;IB=0.8A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
hFE -2
fT
DC current gain
DC current gain
Transition frequency
IC=0.8A ; VCE=5V
IC=4A ; VCE=5V
IC=0.8A ; VCE=10V
Product Specification
2SC2788
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
100 µA
100 µA
15 50
8
20 MHz
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2788 DESCRIPTION ·With TO-3PN package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·F or switching regulator applications PIN NING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplif ied outline (TO-3PN) and symbol DESCRIP TION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMET ER Collector-base voltage Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector current-peak Bas e current Ta=25 PC Collector power diss ipation TC=25 Tj Tstg Junction temperat ure Storage temperature 80 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 8 16 3 2.5 W UNIT V V V A A A SavantIC Semiconducto r www.DataSheet4U.com Product Specific ation Silicon NPN Power Transistors CH ARACTERISTICS Tj=25 unless otherwise sp ecified PARAMETER Collector-emitter breakdown voltage Collector-base.
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