2SC2981 power Transistor Datasheet

2SC2981 Datasheet, PDF, Equivalent


Part Number

2SC2981

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2981 Datasheet


2SC2981
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High voltatge
·High speed
APPLICATIONS
·For high voltatge ,high speed and power
switching applications
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC2981
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
PC
Tj
Tstg
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
TC=25
VALUE
900
800
7
8
100
150
-55~150
UNIT
V
V
V
A
W

2SC2981
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=7
V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2.5A; IB=0.5A
VBE(sat) Base-emitter saturation voltage
IC=2.5A; IB=0.5A
ICBO Collector cut-off current
VCB=750V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.8A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
Product Specification
2SC2981
MIN TYP. MAX UNIT
800 V
900 V
7V
1.0 V
1.5 V
0.1 mA
0.1 mA
15
10
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·High voltatge ·High speed APPLICATIONS ·For high voltatge ,high speed and power switching applications PINNING(see Fig.2) PIN 1 2 3 Base Emit ter DESCRIPTION 2SC2981 Fig.1 simplif ied outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMB OL VCBO VCEO VEBO IC PC Tj Tstg PARAMET ER Collector-base voltage Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector power dissipatio n Junction temperature Storage temperat ure TC=25 Open emitter Open base Open c ollector CONDITIONS VALUE 900 800 7 8 1 00 150 -55~150 UNIT V V V A W SavantIC Semiconductor www.DataSheet4U.com Pro duct Specification Silicon NPN Power T ransistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collecto r-emitter breakdown voltage Collector-b ase breakdown voltage Emitter-base brea kdown voltage Collector-emitter saturation voltage Base-emitter sat.
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