2SC2987 Transistor Datasheet

2SC2987 Datasheet, PDF, Equivalent


Part Number

2SC2987

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC2987 Datasheet


2SC2987
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1227
·High power dissipation
APPLICATIONS
·For audio frequency power amplifier
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC2987
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
VEBO
IC
ICM
PC
Tj
Emitter-base voltage
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
140
140
5
12
20
120
150
-55~150
UNIT
V
V
V
A
A
W

2SC2987
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat
VBEsat
ICBO
IEBO
hFE-1
hFE-2
fT
COB
Collector-emitter saturation voltage IC=5A ;IB=0.5A
Base-emitter saturation voltage
IC=5A ;IB=0.5A
Collector cut-off current
VCB=140V; IE=0
Emitter cut-off current
VEB=3V; IC=0
DC current gain
IC=2A ; VCE=5V
DC current gain
IC=5A ; VCE=5V
Transition frequency
IC=1A ; VCE=5V
Collector output capacitance
IE=0;f=1MHz;VCB=10V
Product Specification
2SC2987
MIN TYP. MAX UNIT
0.6 1.5
V
1.4 2.0
V
50 µA
50 µA
60 320
40
50 MHz
190 pF
hFE-1 Classifications
RQP
60-120 100-200 160-320
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation A PPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolu te maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER C ollector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Co llector power dissipation Junction temp erature Storage temperature TC=25 CONDI TIONS Open emitter Open base Open colle ctor VALUE 140 140 5 12 20 120 150 -55~ 150 UNIT V V V A A W SavantIC Semicond uctor www.DataSheet4U.com Product Spec ification Silicon NPN Power Transistor s CHARACTERISTICS Tj=25 unless otherwis e specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-o.
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