2SC3012 power Transistor Datasheet

2SC3012 Datasheet, PDF, Equivalent


Part Number

2SC3012

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3012 Datasheet


2SC3012
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·Complement to type 2SA1232
·High transition frequency
APPLICATIONS
·Audio frequency power amplifier.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3012
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
IC
Emitter-base voltage
Collector current
ICM Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
130
130
5
10
15
100
150
-55~150
UNIT
V
V
V
A
A
W

2SC3012
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=0.5A
ICBO Collector cut-off current
VCB=130V; IE=0
IEBO Emitter cut-off current
VEB=3V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
Cob Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=1A ; VCE=5V
Product Specification
2SC3012
MIN TYP. MAX UNIT
0.6 1.5
V
1.3 2.0
V
50 µA
50 µA
60 320
40
150 pF
60 MHz
hFE-1 Classifications
RQ
P
60-120 100-200 160-320
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3012 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1232 ·High transition frequenc y APPLICATIONS ·Audio frequency power amplifier. PINNING PIN 1 2 3 Base Colle ctor;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ra tings(Ta= ) SYMBOL VCBO VCEO VEBO IC IC M PC Tj Tstg PARAMETER Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collector current Collec tor current-peak Collector power dissip ation Junction temperature Storage temp erature TC=25 Open emitter Open base Op en collector CONDITIONS VALUE 130 130 5 10 15 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4 U.com Product Specification Silicon N PN Power Transistors CHARACTERISTICS Tj =25 unless otherwise specified PARAMETE R Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter c.
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