2SC3025 power Transistor Datasheet

2SC3025 Datasheet, PDF, Equivalent


Part Number

2SC3025

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3025 Datasheet


2SC3025
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·High voltage power switching character
display horizontal deflection output
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC3025
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICP Collector current-peak
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
TC=25
VALUE
1500
800
6
5
6
50
150
-45~150
UNIT
V
V
V
A
A
W

2SC3025
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=8
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=5A; IB=1.25A
VBE(sat) Base-emitter saturation voltage
IC=5A; IB=1.25A
ICES Collector cut-off current
VCE=1500V; RBE=8
Switching times
ts Storage time
tf Fall time
IC=5A; IB1=1A;IB2=-2.5A
Product Specification
2SC3025
MIN TYP. MAX UNIT
800 V
6V
2.0 V
1.5 V
0.5 mA
4.0 µs
0.5 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·High breakdown voltage APP LICATIONS ·High voltage power switchin g character display horizontal deflecti on output PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC3025 Fig. 1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(Ta= 25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector cur rent-peak Collector power dissipation J unction temperature Storage temperature TC=25 Open emitter Open base Open coll ector CONDITIONS VALUE 1500 800 6 5 6 5 0 150 -45~150 UNIT V V V A A W SavantI C Semiconductor www.DataSheet4U.com Pr oduct Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unles s otherwise specified PARAMETER Collect or-emitter breakdown voltage Emitter-ba se breakdown voltage Collector-emitter saturation voltage Base-emi.
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