2SC3038 power Transistor Datasheet

2SC3038 Datasheet, PDF, Equivalent


Part Number

2SC3038

Description

Silicon power Transistor

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3038 Datasheet


2SC3038
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-220C package
·High breakdown voltage
: VCBO=500V(Min)
·Wide area of safe operation
·Fast switching speed
APPLICATIONS
·400V/4A switching regulator applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3038
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-pulse
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
PW3300µs,Duty cycle310%
TC=25
VALUE
500
400
7
4
8
1.5
1.75
40
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3038
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; RBE=A
V(BR)CBO Collector-base breakdown voltage
IC=1mA ; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ; IC=0
VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A
VBE(sat) Base-emitter saturation voltage
IC=2A; IB=0.4A
ICBO Collector cut-off current
VCB=400V ;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.4A ; VCE=5V
hFE-2
DC current gain
IC=2A ; VCE=5V
fT Transition frequency
IC=0.4A ; VCE=10V
COB Output capacitance
f=1MHz ; VCB=10V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
VCC=200V; IC=3A
IB1=0.6A;IB2=-0.6A;
RL=66.6F
Product Specification
2SC3038
MIN TYP. MAX UNIT
400 V
500 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
20 MHz
40 pF
1.0 µs
2.5 µs
1.0 µs
hFE-1 Classifications
LM
15-30
20-40
N
30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3038 DESCRIPTION ·With TO-220C package ·High breakdow n voltage : VCBO=500V(Min) ·Wide area of safe operation ·Fast switching spee d APPLICATIONS ·400V/4A switching regu lator applications PINNING PIN 1 2 3 Ba se Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO I C ICP IB PARAMETER Collector-base volta ge Collector-emitter voltage Emitter-ba se voltage Collector current Collector current-pulse Base current PW 3300µs,D uty cycle310% CONDITIONS Open emitter O pen base Open collector VALUE 500 400 7 4 8 1.5 1.75 PC Collector power dissip ation TC=25 Tj Tstg Junction temperatur e Storage temperature 40 150 -55~150 W UNIT V V V A A A SavantIC Semiconducto r www.DataSheet4U.com Product Specific ation Silicon NPN Power Transistors CH ARACTERISTICS Tj=25 unless otherwise sp ecified PARAMETER Collector-emitter breakdown voltage Collector-base .
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