POWER TRANSISTOR. 2SC3061 Datasheet


2SC3061 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SC3061

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3061 Datasheet


2SC3061
SavantIC Semiconductor
wSwiwl.iDcatoaSnheeNt4PU.cNomPower Transistors
DESCRIPTION
·With TO-3 package
·Ultra-fast switching
·Wide area of safe operation
·High breakdown voltage
APPLICATIONS
·Switching regulators
·Motor controls
·Ultrasonic oscillators
·Class C and D amplifiers
·Deflection circuits
PINNING(see Fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Product Specification
2SC3061
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
PW/25µs,Duty cycle/50%
TC=25
VALUE
1200
850
7
10
20
5
200
175
-65~175
UNIT
V
V
V
A
A
A
W

2SC3061
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
Product Specification
2SC3061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=>
V(BR)CBO Collector-base breakdown voltage
IC=1mA; IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A
VBE(sat) Base-emitter saturation voltage
IC=4A; IB=0.8A
ICBO Collector cut-off current
VCB=1000V; IE=0
VCB=1000V; IE=0, TC=100
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=4A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=10V
Cob Output capacitance
IE=0; VCB=10V,f=1MHz
Switching times
850 V
1200
V
7V
1.5 V
2.0 V
100 µA
1 mA
100 µA
10 30
15 MHz
220 pF
tr Rise time
tstg Storage time
tf Fall time
VCC=400V; IC=4A
IB1=0.4A;IB2=-1.2A;
0.5 µs
3.5 µs
0.3 µs
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -3 package ·Ultra-fast switching ·Wid e area of safe operation ·High breakdo wn voltage APPLICATIONS ·Switching reg ulators ·Motor controls ·Ultrasonic o scillators ·Class C and D amplifiers Deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2S C3061 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO I C ICP IB PC Tj Tstg PARAMETER Collector -base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-pulse Base current C ollector power dissipation Junction tem perature Storage temperature TC=25 PW / 25µs,Duty cycle/50% Open emitter Open base Open collector CONDITIONS VALUE 12 00 850 7 10 20 5 200 175 -65~175 UNIT V V V A A A W SavantIC Semiconductor ww w.DataSheet4U.com Product Specificatio n Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise s.
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