2SC3088 POWER TRANSISTOR Datasheet

2SC3088 Datasheet, PDF, Equivalent


Part Number

2SC3088

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SC3088 Datasheet


2SC3088
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO 800V)
·Fast switching speed
·Wide area of safe operation
APPLICATIONS
·500V/4A Switching Regulator Applications
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Product Specification
2SC3088
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICP Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
PW5300µs, Duty Cycle510%
Ta=25
TC=25
VALUE
800
500
7
4
8
1.5
2.5
60
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3088
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=B
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A
VBEsat
Base-emitter saturation voltage
IC=1.5A; IB=0.3A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE -2
DC current gain
IC=1.5A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=0.3A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=2A ;IB1=-IB2=0.4 A
RL=100G,VCC=200V
Product Specification
2SC3088
MIN TYP. MAX UNIT
500 V
800 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
40 pF
18 MHz
1.0 µs
3.0 µs
1.0 µs
hFE-1 classifications
L MN
15-30 20-40 30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3088 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 800V) ·Fast switching s peed ·Wide area of safe operation APPL ICATIONS ·500V/4A Switching Regulator Applications PINNING PIN 1 2 3 Base Col lector;connected to mounting base Emitt er Fig.1 simplified outline (TO-3PN) an d symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base volt age Collector-emitter voltage Emitter-b ase voltage Collector current Collector current-peak Base current Ta=25 PC Col lector power dissipation TC=25 Tj Tstg Junction temperature Storage temperatur e 60 150 -55~150 PW 5300µs, Duty Cycle 510% CONDITIONS Open emitter Open base Open collector VALUE 800 500 7 4 8 1.5 2.5 W UNIT V V V A A A SavantIC Semico nductor www.DataSheet4U.com Product Sp ecification Silicon NPN Power Transist ors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collec.
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