POWER TRANSISTOR. 2SC3090 Datasheet


2SC3090 TRANSISTOR. Datasheet pdf. Equivalent


Part Number

2SC3090

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 4 Pages
Datasheet
Download 2SC3090 Datasheet


2SC3090
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
DESCRIPTION
·With TO-3PN package
·High breakdown voltage (VCBO 800V)
·Fast switching speed
·Wide ASO Safe Operating Area
APPLICATIONS
·500V/10A Switching Regulator Applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Product Specification
2SC3090
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current
ICM Collector current-peak
IB Base current
PC Collector power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
VALUE
800
500
7
10
20
4
2.5
100
150
-55~150
UNIT
V
V
V
A
A
A
W

2SC3090
SavantIC Semiconductor
Silicon NPN Power Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=<
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A; IB=1.2A
VBEsat
Base-emitter saturation voltage
IC=6A; IB=1.2A
ICBO Collector cut-off current
VCB=500V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1.2A ; VCE=5V
hFE -2
DC current gain
IC=6A ; VCE=5V
COB Output capacitance
IE=0 ; VCB=10V;f=1MHz
fT Transition frequency
IC=1.2A ; VCE=10V
Switching times
ton Turn-on time
ts Storage time
tf Fall time
IC=7A; IB1=-IB2=1.4A
RL=28.6D,VCC=200V
Product Specification
2SC3090
MIN TYP. MAX UNIT
500 V
800 V
7V
1.0 V
1.5 V
10 µA
10 µA
15 50
8
160 pF
18 MHz
1.0 µs
3.0 µs
1.0 µs
hFE-1 classifications
L MN
15-30
20-40
30-50
2


Features SavantIC Semiconductor www.DataSheet4U.c om Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 800V) ·Fast switching s peed ·Wide ASO Safe Operating Area APP LICATIONS ·500V/10A Switching Regulato r Applications PINNING PIN 1 2 3 Base C ollector;connected to mounting base Emi tter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximu m ratings (Ta=25 ) SYMBOL VCBO VCEO VEB O IC ICM IB PARAMETER Collector-base vo ltage Collector-emitter voltage Emitter -base voltage Collector current Collect or current-peak Base current Ta=25 PC C ollector power dissipation TC=25 Tj Tst g Junction temperature Storage temperat ure 100 150 -55~150 CONDITIONS Open emi tter Open base Open collector VALUE 800 500 7 10 20 4 2.5 W UNIT V V V A A A SavantIC Semiconductor www.DataSheet4U. com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=2 5 unless otherwise specified PARAMETER Collector-emitter breakdown v.
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