MJE15030 Power Transistors Datasheet

MJE15030 Datasheet, PDF, Equivalent


Part Number

MJE15030

Description

Silicon NPN Power Transistors

Manufacture

Savantic

Total Page 4 Pages
Datasheet
Download MJE15030 Datasheet


MJE15030
www.daStaasvhaenett4ICu.cSoemmiconductor
Silicon NPN Power Transistors
Product Specification
MJE15030
DESCRIPTION
·With TO-220C package
·Complement to type MJE15031
·High transition frequency
·DC current gain specified to 4.0 amperes
hFE = 40 (Min) @ IC = 3.0 Adc
hFE = 20 (Min) @ IC = 4.0 Adc
APPLICATIONS
·Designed for use as high–frequency
drivers in audio amplifiers.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
VEBO
IC
ICM
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current-Peak
IB Base current
PD Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25
TC=25
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-C
Thermal resistance ; junction to case
Rth j-A
Thermal resistance , junction to ambient
VALUE
150
150
5
8
16
2
2
50
150
-65~150
UNIT
V
V
V
A
A
A
W
MAX
2.5
62.5
UNIT
/W
/W

MJE15030
www.daStaasvhaenett4ICu.cSoemmiconductor
Silicon NPN Power Transistors
Product Specification
MJE15030
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat Collector-emitter saturation voltage
VBE Base-emitter on voltage
ICBO Collector cut-off current
ICEO Collector cut-off current
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
hFE-3
DC current gain
hFE-4
DC current gain
fT Transition frequency
IC=10mA; IB=0
150
IC=1A ;IB=0.1A
IC=1A ; VCE=2V
VCB=150V; IE=0
VCE=150V; IB=0
VEB=5V; IC=0
IC=0.1A ; VCE=2V
40
IC=2A ; VCE=2V
40
IC=3A ; VCE=2V
40
IC=4A ; VCE=2V
20
IC=0.5A;VCE=10V;f=10MHz
30
V
0.5 V
1.0 V
10 µA
0.1 mA
10 µA
MHz
2


Features www.datasheet4u.com SavantIC Semiconduct or Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO -220C package ·Complement to type MJE1 5031 ·High transition frequency ·DC c urrent gain specified to 4.0 amperes hF E = 40 (Min) @ IC = 3.0 Adc hFE = 20 (M in) @ IC = 4.0 Adc APPLICATIONS ·Desig ned for use as high–frequency drivers in audio amplifiers. PINNING PIN 1 2 3 Base Collector;connected to mounting b ase Emitter DESCRIPTION MJE15030 Abso lute maximum ratings (Tc=25 ) SYMBOL VC BO VCEO VEBO IC ICM IB PD Tj Tstg PARAM ETER Collector-base voltage Collector-e mitter voltage Emitter-base voltage Col lector current (DC) Collector current-P eak Base current Total power dissipatio n Junction temperature Storage temperat ure Ta=25 TC=25 CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 8 16 2 2 W 50 150 -65~150 UNIT V V V A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C Rth j-A PARAMETER Thermal resis tance ; junction to case Thermal resistance , junction to ambient MAX .
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