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POWER TRANSISTOR. 2SD718 Datasheet

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POWER TRANSISTOR. 2SD718 Datasheet






2SD718 TRANSISTOR. Datasheet pdf. Equivalent




2SD718 TRANSISTOR. Datasheet pdf. Equivalent





Part

2SD718

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD718 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement t o type 2SB688 APPLICATIONS ·Power ampl ifier applications ·Recommend for 45~5 0W audio frequency amplifier output sta ge PINNING PIN 1 2 3 Base Collector;con nected to mounting base Emitter Fig.1 s implified outline (TO-.
Manufacture

SavantIC

Datasheet
Download 2SD718 Datasheet


SavantIC 2SD718

2SD718; 3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCE O VEBO IC IB PT Tj Tstg PARAMETER Colle ctor-base voltage Collector-emitter vol tage Emitter-base voltage Collector cur rent Base current Total power dissipati on Junction temperature Storage tempera ture TC=25 CONDITIONS Open emitter Open base Open collector VALUE 120 120 5 8 0.8 80 150 -55~150.


SavantIC 2SD718

UNIT V V V A A W SavantIC Semiconducto r Product Specification Silicon NPN P ower Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Ba se-emitter breakdown voltage Collector- emitter saturation voltage Base-emitter voltage Collector cut-off current Emit ter cut-off current DC current gain Tra nsition frequency Output capacitance CO NDITIONS IC=50mA ,.


SavantIC 2SD718

IB=0 IC=5A; IB=0.5A IC=5A ; VCE=5V VCB=1 20V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V I C=1A ; VCE=5V IE=0 ; VCB=10V ;f=1MHz 55 12 170 MIN 120 TYP. www.datasheet4u.co m 2SD718 SYMBOL V(BR)CEO VCEsat VBE I CBO IEBO hFE fT Cob MAX UNIT V 2.5 1 .5 10 10 160 V V µA µA MHz pF hFE Classifications R 55-110 O 80-160 2 S avantIC Semiconductor Product Specific ation Silicon NPN P.

Part

2SD718

Description

SILICON POWER TRANSISTOR



Feature


SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD718 www.datasheet4u.com DESCRIPTION ·With TO-3P(I) package ·Complement t o type 2SB688 APPLICATIONS ·Power ampl ifier applications ·Recommend for 45~5 0W audio frequency amplifier output sta ge PINNING PIN 1 2 3 Base Collector;con nected to mounting base Emitter Fig.1 s implified outline (TO-.
Manufacture

SavantIC

Datasheet
Download 2SD718 Datasheet




 2SD718
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD718
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mP(I) package
·Complement to type 2SB688
APPLICATIONS
·Power amplifier applications
·Recommend for 45~50W audio frequency
amplifier output stage
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3P(I)) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PT
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
120
120
5
8
0.8
80
150
-55~150
UNIT
V
V
V
A
A
W




 2SD718
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD718
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Base-emitter breakdown voltage
IC=50mA ,IB=0
VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A
VBE Base-emitter voltage
IC=5A ; VCE=5V
ICBO Collector cut-off current
VCB=120V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE DC current gain
IC=1A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=5V
Cob Output capacitance
IE=0 ; VCB=10V ;f=1MHz
MIN TYP. MAX UNIT
120 V
2.5 V
1.5 V
10 µA
10 µA
55 160
12 MHz
170 pF
hFE Classifications
RO
55-110
80-160
2




 2SD718
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
Product Specification
2SD718
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3



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