2SD725 TRANSISTOR Datasheet

2SD725 Datasheet, PDF, Equivalent


Part Number

2SD725

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD725 Datasheet


2SD725
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD725
DESCRIPTION
www.dat·aWshiethet4TuO.co-3m package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For high voltage,power switching and
TV horizontal output applications
PINNING(see fig.2)
PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
7
50
150
-65~150
UNIT
V
V
V
A
W

2SD725
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD725
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=5 A;IB=1 A
VBEsat
Base-emitter saturation voltage
IC=5 A;IB=1 A
ICBO Collector cut-off current
VCB=800V;IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
MIN TYP. MAX UNIT
600 V
5V
5.0 V
1.5 V
10 µA
0.1 mA
8 36
5
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD725 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High voltage ,hi gh speed ·Low collector saturation vol tage APPLICATIONS ·For high voltage,po wer switching and TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplif ied outline (TO-3) and symbol DESCRIPTI ON Absolute maximum ratings(Ta= ) SYMB OL VCBO VCEO VEBO IC PC Tj Tstg PARAMET ER Collector-base voltage Collector-emi tter voltage Emitter-base voltage Colle ctor current Collector power dissipatio n Junction temperature Storage temperat ure TC=25 Open emitter Open base Open c ollector CONDITIONS VALUE 1500 600 5 7 50 150 -65~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTER ISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.data sheet4u.com 2SD725 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 60.
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