2SD727 TRANSISTOR Datasheet

2SD727 Datasheet, PDF, Equivalent


Part Number

2SD727

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD727 Datasheet


2SD727
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD727
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package
·Complement to type 2SB691
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
Open emitter
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
PC Collector power dissipation TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE UNIT
130 V
130 V
5V
5A
60 W
150
-55~150

2SD727
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD727
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A
ICBO Collector cut-off current
VCB=130V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4A ; VCE=5V
fT Transition frequency
IC=1A ; VCE=5V
COB Collector output capacitance
IE=0 ;f=1MHz;VCB=10V
MIN TYP. MAX UNIT
130 V
5V
2.5 V
0.1 mA
0.1 mA
60 200
20
7 MHz
110 pF
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD727 www.datasheet4u.com DESCRIPTION ·With TO-3PN package ·Complement to type 2SB691 APPLICATIONS ·For low freq uency power amplifier and power switchi ng applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Em itter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maxim um ratings(Ta=25 ) SYMBOL VCBO VCEO VEB O IC PC Tj Tstg PARAMETER Collector-bas e voltage Collector-emitter voltage Emi tter-base voltage Collector current Col lector power dissipation Junction tempe rature Storage temperature TC=25 Open e mitter Open base Open collector CONDITI ONS VALUE 130 130 5 5 60 150 -55~150 UN IT V V V A W SavantIC Semiconductor P roduct Specification Silicon NPN Power Transistors 2SD727 CHARACTERISTICS w ww.datasheet4u.com Tj=25 unless other wise specified PARAMETER Collector-emit ter breakdown voltage Emitter-base brea kdown voltage Collector-emitter saturation voltage Collector cut-o.
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