2SD798 TRANSISTOR Datasheet

2SD798 Datasheet PDF, Equivalent


Part Number

2SD798

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD798 Datasheet


2SD798
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD798
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High voltage
·DARLINGTON
APPLICATIONS
·With switching and igniter applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
MAX
600
300
5
6
1
30
150
-55~150
UNIT
V
V
V
A
A
W

2SD798
SavantIC Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.5A ;L=40mH
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A
VBEsat
Base-emitter saturation voltage
IC=4A ;IB=0.04A
ICBO Collector cut-off current
VCB=600V; IE=0
IEBO Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=4A ; VCE=2V
COB Collector output capacitance
f=1MHz;VCB=50V
Switching times
ton Turn-on time
tstg Storage time
tf Fall time
IB1=-IB2=0.04A
VCC@100V,RL=25B
Product Specification
2SD798
MIN TYP. MAX UNIT
300 V
2.0 V
2.5 V
0.5 mA
0.5 mA
1500
200
35 pF
1 µs
8 µs
5 µs
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD798 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High voltage DARLINGTON APPLICATIONS ·With switchi ng and igniter applications PINNING PIN 1 2 3 Base Collector;connected to moun ting base Emitter Fig.1 simplified outl ine (TO-220) and symbol DESCRIPTION Ab solute maximum ratings(Ta=25 ) SYMBOL V CBO VCEO VEBO IC IB PC Tj Tstg PARAMETE R Collector-base voltage Collector-emit ter voltage Emitter-base voltage Collec tor current Base current Collector powe r dissipation Junction temperature Stor age temperature TC=25 CONDITIONS Open e mitter Open base Open collector MAX 600 300 5 6 1 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Sp ecification Silicon NPN Power Transist ors CHARACTERISTICS Tj=25 unless otherw ise specified PARAMETER Collector-emitt er sustaining voltage Collector-emitter saturation voltage Base-emitter satura tion voltage Collector cut-off current Emitter cut-off current DC c.
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