2SD799 TRANSISTOR Datasheet

2SD799 Datasheet PDF, Equivalent


Part Number

2SD799

Description

SILICON POWER TRANSISTOR

Manufacture

SavantIC

Total Page 3 Pages
Datasheet
Download 2SD799 Datasheet


2SD799
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD799
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·High DC current gain
·DARLINGTON
APPLICATIONS
·Igniter applications
·High voltage switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open emitter
Open base
Open collector
TC=25
VALUE
600
400
5
6
1
30
150
-55~150
UNIT
V
V
V
A
A
W

2SD799
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD799
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0
VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.04A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.04A
ICBO Collector cut-off current
VCB=600V; IE=0
IEBO Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
VECF
Diode forward voltage
COB Collector output capacitance
VEB=5V; IC=0
IC=2A ; VCE=2V
IC=4A ; VCE=2V
IE=4A; IB=0
f=1MHz;VCB=50V
MIN TYP. MAX UNIT
400 V
2.0 V
2.5 V
0.5 mA
3.0 mA
600
100
3.0 V
35 pF
2


Features SavantIC Semiconductor Product Specific ation Silicon NPN Power Transistors 2 SD799 www.datasheet4u.com DESCRIPTION ·With TO-220 package ·High DC curren t gain ·DARLINGTON APPLICATIONS ·Igni ter applications ·High voltage switchi ng applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Em itter DESCRIPTION Absolute maximum rat ings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC I B PC Tj Tstg PARAMETER Collector-base v oltage Collector-emitter voltage Emitte r-base voltage Collector current Base c urrent Collector power dissipation Junc tion temperature Storage temperature TC =25 Open emitter Open base Open collect or CONDITIONS VALUE 600 400 5 6 1 30 15 0 -55~150 UNIT V V V A A W SavantIC Se miconductor Product Specification Sil icon NPN Power Transistors CHARACTERIST ICS Tj=25 unless otherwise specified PA RAMETER Collector-emitter breakdown vol tage Collector-emitter saturation volta ge Base-emitter saturation voltage Coll ector cut-off current Emitter cut-off current DC current gain DC cur.
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