POWER TRANSISTOR. BU2520AF Datasheet

BU2520AF TRANSISTOR. Datasheet pdf. Equivalent

Part BU2520AF
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BU2520AF www.datashee.
Manufacture SavantIC
Datasheet
Download BU2520AF Datasheet



BU2520AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520AF
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPFa package
·High voltage
·High speed switching
APPLICATIONS
· For use in horizontal deflection circuits
of large screen colour TV receivers.
PINNING
PIN
1
DESCRIPTION
Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Open emitter
Open base
Open collector
IB Base Collector current (DC)
IBM Base current (Pulse)
Ptot Total power dissipation
TC=25
Tj Max.operating junction temperature
Tstg Storage temperature
VALUE
1500
800
7.5
10
25
6
9
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BU2520AF
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BU2520AF
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VEBO
Emitter-base breakdown voltage
IB=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=6A ;IB=1.2 A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=6A ;IB=1.2 A
VCE=BVCES; VBE=0
Tj=125
VEB=7.5V; IC=0
hFE-1
DC current gain
IC=0.1A ; VCE=5V
hFE-2
DC current gain
IC=6A ; VCE=5V
CC Collector capacitance
IE=0; f=1MHz;VCB=10V
MIN TYP. MAX UNIT
800 V
7.5 13.5
V
5.0 V
1.1 V
1.0
2.0
mA
1.0 mA
13
5 7 9.5
115 pF
2





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