POWER TRANSISTOR. BUH1015 Datasheet

BUH1015 TRANSISTOR. Datasheet pdf. Equivalent

Part BUH1015
Description SILICON POWER TRANSISTOR
Feature SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUH1015 www.datasheet.
Manufacture SavantIC
Datasheet
Download BUH1015 Datasheet



BUH1015
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH1015
DESCRIPTION
www.dat·aWshiethet4TuO.co-3mPN package.
·High voltage.
·High switching speed.
APPLICATIONS
·Horizontal deflection for colour TV
and monitors.
PINNING
PIN
DESCRIPTION
1 Base
2
Collector;connected to
mounting base
3 Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
Open emitter
Open base
VEBO
IC
ICM
IB
IBM
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current
Base current -peak
Open collector
PC
Collector power dissipation
TC=25
Tj Junction temperature
Tstg Storage temperature
VALUE
1500
700
10
14
18
8
11
160
150
-65~150
UNIT
V
V
V
A
A
A
A
W



BUH1015
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
BUH1015
CHARACTERISTICS
www.datTasj=h2ee5t4u.ucnomless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0
VCEsat Collector-emitter saturation voltage IC=10A; IB=2A
VBEsat
Base-emitter saturation voltage
ICES Collector cut-off current
IEBO Emitter cut-off current
IC=10A; IB=2A
VCE=1500V ;VBE=0
Tj=125°C
VEB=5V; IC=0
hFE DC current gain
IC=10A ; VCE=5V
Switching times
ts Storage time
tf Fall time
IC=10A;IB1=2A;IB2=-6A;
VCC=400V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-case Thermal resistance junction case
MIN TYP. MAX UNIT
10 V
700 V
1.5 V
1.5 V
0.2
2
mA
0.1 mA
7 10 14
1.5 µs
110 ns
MAX
0.78
UNIT
/W
2





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