PD20010-E
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
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Features
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Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Descript...
