DatasheetsPDF.com

SSM3J306T

Part Number	SSM3J306T
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Jul 7, 2009
Detailed Description	SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • ...
Datasheet	SSM3J306T PDF File

Overview

SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications • 4 V drive • Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS −30 V Gate–source voltage VGSS ± 20 V Drain current DC ID Pulse IDP −2.
4 A −4.
8 Drain power dissipation PD (Note 1) 700 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature,...

Similar Datasheet

SSM3J304T Silicon P-Channel MOSFET - Toshiba Semiconductor
SSM3J305T Field-Effect Transistor Silicon P-Channel MOS Type - Toshiba Semiconductor
SSM3J306T Silicon P-Channel MOSFET - Toshiba Semiconductor
SSM3J307T Silicon P-Channel MOSFET - Toshiba Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)