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BLF6G10LS-200 Datasheet, Equivalent, LDMOS transistor.

Power LDMOS transistor

Power LDMOS transistor

 

 

 

Part BLF6G10LS-200
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-200 Power LDMOS transistor Rev.
01 — 18 Januar y 2008 Preliminary data sheet 1.
Produ ct profile 1.
1 General description 200 W LDMOS power transistor for base stat ion applications at frequencies from 80 0 MHz to 1000 MHz.
Table 1.
Typical per formance Typical RF performance at Tcas e = 25 °C in a class-AB production tes t circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per ca rrier; carrier spacing .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-200 Datasheet
Part BLF6G10LS-200
Description Power LDMOS transistor
Feature www.
DataSheet4U.
com BLF6G10LS-200 Power LDMOS transistor Rev.
01 — 18 Januar y 2008 Preliminary data sheet 1.
Produ ct profile 1.
1 General description 200 W LDMOS power transistor for base stat ion applications at frequencies from 80 0 MHz to 1000 MHz.
Table 1.
Typical per formance Typical RF performance at Tcas e = 25 °C in a class-AB production tes t circuit.
Mode of operation 2-carrier W-CDMA [1] f (MHz) 869 to 894 VDS (V) 28 PL(AV) (W) 40 Gp (dB) 20 ηD (%) 27 ACPR (dBc) −41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.
5 dB at 0.
01 % probability on CCDF per ca rrier; carrier spacing .
Manufacture NXP Semiconductors
Datasheet
Download BLF6G10LS-200 Datasheet

BLF6G10LS-200

BLF6G10LS-200
BLF6G10LS-200

BLF6G10LS-200

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