IXTA36N30P. TA36N30P Datasheet

TA36N30P IXTA36N30P. Datasheet pdf. Equivalent

Part TA36N30P
Description IXTA36N30P
Feature Advanced Technical Information www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mod.
Manufacture IXYS Corporation
Datasheet
Download TA36N30P Datasheet




TA36N30P
www.DataSheet4U.com
PolarHTTM
Power MOSFET
Advanced Technical Information
IXTQ 36N30P
IXTA 36N30P
IXTP 36N30P
VDSS =
ID25 =
=RDS(on)
300 V
36 A
110 m
N-Channel Enhancement Mode
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 10
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering
TO-263 package for 10s
Mounting torque (TO-3P / TO-220)
TO-3P
TO-220
TO-263
Maximum Ratings
300 V
300 V G
±20 V
DS
36 A TO-220 (IXTP)
90 A
36 A
30 mJ
1.0 J
G DS
10 V/ns TO-263 (IXTA)
(TAB)
(TAB)
300
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
5.5 g
4g
3g
GS
(TAB)
G = Gate
S = Source
Features
D = Drain
TAB = Drain
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
300 V
VGS(th)
VDS = VGS, ID = 250µA
2.5 5.0 V
IGSS VGS = ±20 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125°C
25 µA
250 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
92 110 m
Advantages
z Easy to mount
z Space savings
z High power density
PolarHTTM DMOS transistors
utilize proprietary designs and
process. US patent is pending.
© 2004 IXYS All rights reserved
DS99155(03/04)



TA36N30P
www.DataSheet4U.com
IXTA 36N30P IXTP 36N30P
IXTQ 36N30P
Symbol
gfs
Ciss
Coss
Crss
ttdr (on)
td(off)
tf
Qg(on)
Qgs
Qgd
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless
Min.
otherwise specified)
Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
12 22
2250
370
90
S
pF
pF
pF
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
RG = 10 (External)
24 ns
30 ns
97 ns
28 ns
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
70 nC
17 nC
35 nC
(TO-3P)
(TO-220)
0.21
0.25
0.42 K/W
K/W
K/W
TO-3P (IXTQ) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. typ. Max.
IS VGS = 0 V
ISM Repetitive
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 µs, duty cycle d 2 %
36 A
90 A
1.5 V
trr IF = 25 A
-di/dt = 100 A/µs
QRM VR = 100 V
250 ns
2.0 µC
TO-220 (IXTA) Outline
TO-263 (IXTP) Outline
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Millimeter
Min. Max.
4.06 4.83
2.03 2.79
0.51 0.99
1.14 1.40
0.46 0.74
1.14 1.40
8.64 9.65
7.11 8.13
9.65 10.29
6.86 8.13
2.54 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
0.46 0.74
Inches
Min. Max.
.160 .190
.080 .110
.020 .039
.045 .055
.018 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270 .320
.100 BSC
.575 .625
.090 .110
.040 .055
.050 .070
0 .015
.018 .029
Pins: 1 - Gate
2 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961
5,237,481 5,381,025
5,187,117 5,486,715
6,404,065B1 6,162,665 6,534,343 6,583,505
6,306,728B1 6,259,123B1 6,306,728B1 6,683,344







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