FDS8840NZ N-Channel Power Trench® MOSFET
April 2009
FDS8840NZ
N-Channel PowerTrench® MOSFET
40 V, 18.6 A, 4.5 mΩ Features
Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18.6 A Max rDS(on) = 6.0 mΩ at VGS = 4.5 V, ID = 14.9 A HBM ESD protection level of 6 kV typical(note 3) High performance trench technology for extremely low rDS(on) and fast switching ...
