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38N30
FQA38N30
Description
FQA38N30 — N-Channel QFET® MOSFET FQA38N30 N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ Features 38.4 A, 300 V, RDS(on) = 85 mΩ (Max.) @ VGS = 10 V, ID = 19.2 A Low Gate Charge (Typ. 90 nC) Low Crss (Typ. 70 pF) 100% Avalanche Tested RoHS compliant August 2014 Description These N-Channel enhancement mode power field effect
transistor
s are produced...
Fairchild Semiconductor
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