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STPSC606

ST Microelectronics
Part Number STPSC606
Manufacturer ST Microelectronics
Description Schottky Barrier 600 V power Schottky silicon carbide diode
Published Mar 1, 2010
Detailed Description www.DataSheet4U.com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recove...
Datasheet PDF File STPSC606 PDF File

STPSC606
STPSC606

Overview
www.
DataSheet4U.
com STPSC606 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode K A K Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive turn-off behavior is independent of temperature.
ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
TO-...


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