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HAT2279N
Silicon N Channel Power MOS FET Power Switching
Preliminary Rev.2.00 Jul.05.2005
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9.8 mΩ typ. (at VGS = 10 V) Lead Free
Outline
LFPAK-i
5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G)
4 G
8(D) 7(D) 6(D...
