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HAT2285WP

Part Number	HAT2285WP
Manufacturer	Renesas Technology
Description	Silicon N-Channel Power MOSFET
Published	Apr 13, 2010
Detailed Description	Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switchin...
Datasheet	HAT2285WP PDF File

Overview

Preliminary Datasheet HAT2285WP Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching REJ03G1371-0310 Rev.
3.
10 May 13, 2010 Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Built-in Schottky Barrier Diode Outline RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D) 5 678 2 G1 4 32 1 78 D1 D1 56 S1/D2 S1/D2 4 G2 S1/D2(kelvin) 1 MOS1 S2 3 MOS2 and Schottky Barrier Diode 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR Pch...

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HAT2285WP Silicon N-Channel Power MOSFET - Renesas Technology

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