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JDV2S14E

Part Number	JDV2S14E
Manufacturer	Toshiba Semiconductor
Description	Diode
Published	Apr 14, 2010
Detailed Description	JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type com JDV2S14E Useful for VCO/TCXO • • • Small Packa...
Datasheet	JDV2S14E PDF File

Overview

JDV2S14E TOSHIBA Diode Silicon Epitaxial Planar Type com JDV2S14E Useful for VCO/TCXO • • • Small Package High Capacitance Ratio : C1V/C2.
5V = 2.
15 (typ.
) Low Series Resistance : rs = 0.
4 Ω (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 −55~125 Unit V °C °C Weight: 0.
0014 g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
It is the responsibility of the buyer, when utilizi...

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