NTMFS4852N Advance Information Power MOSFET
Features
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30 V, 155 A, Single N−Channel, SO−8 FL
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device
V(BR)DSS 30 V
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RDS(ON) MAX 2.1 mW @ 10 V 3.1 mW @ 4....
