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Reject Mixer. AMMP-6530 Datasheet

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Reject Mixer. AMMP-6530 Datasheet






AMMP-6530 Mixer. Datasheet pdf. Equivalent




AMMP-6530 Mixer. Datasheet pdf. Equivalent





Part

AMMP-6530

Description

5-30 GHz Image Reject Mixer

Manufacture

Agilent Technologies

Datasheet
Download AMMP-6530 Datasheet


Agilent Technologies AMMP-6530

AMMP-6530; Agilent AMMP-6530 5– 30 GHz Image Reje ct Mixer Data Sheet w w w . D a t a S h e e t 4 U . c o Features • 5x5 mm Surface Mount Package • Broad Band Pe rformance 5 – 30 GHz • Low Conversi on Loss of 8 dB • High Image Rejectio n of 15 – 20 dB • Good 3rd Order In tercept of +18 dBm Description Agilent s AMMP-6530 is an image reject mixer that operates from 5 GHz to 30 GHz. .


Agilent Technologies AMMP-6530

The cold channel FET mixer is designed t o be an easy-to-use component for any s urface mount PCB application. It can be used drain pumped for low conversion l oss applications, or when gate pumped t he mixer can provide high linearity for SSB up-conversion. An external 90-degr ee hybrid is used to achieve image reje ction and a -1V voltage reference is ne eded. Intended app.


Agilent Technologies AMMP-6530

lications include microwave radios, 802. 16, VSAT, and satellite receivers. Sinc e this one mixer can cover several band s, the AMMP-6530 can reduce part invent ory. The integrated mixer eliminates co mplex tuning and assembly processes typ ically required by hybrid (discrete-FET or diode) mixers. The package is fully SMT compatible with backside grounding and I/O to simpli.



Part

AMMP-6530

Description

5-30 GHz Image Reject Mixer

Manufacture

Agilent Technologies

Datasheet
Download AMMP-6530 Datasheet




 AMMP-6530
Agilent AMMP-6530
www.DataSheet4U.co
5– 30 GHz Image Reject Mixer
Data Sheet
Description
Agilent’s AMMP-6530 is an image
reject mixer that operates from
5 GHz to 30 GHz. The cold
channel FET mixer is designed to
be an easy-to-use component for
any surface mount PCB applica-
tion. It can be used drain pumped
for low conversion loss applica-
tions, or when gate pumped the
mixer can provide high linearity
for SSB up-conversion. An
external 90-degree hybrid is used
to achieve image rejection and a
-1V voltage reference is needed.
Intended applications include
microwave radios, 802.16, VSAT,
and satellite receivers. Since this
one mixer can cover several
bands, the AMMP-6530 can
reduce part inventory. The
integrated mixer eliminates
complex tuning and assembly
processes typically required by
hybrid (discrete-FET or diode)
mixers. The package is fully SMT
compatible with backside ground-
ing and I/O to simplify assembly.
NC
7
Vg
6
NC
5
8
RF
IF1
1
NC
2
IF2
3
gate
4
Top view
Pin Function package base: GND
1 IF1
2
3 IF2
4 LO
5
6 Vg
7
8 RF
Features
5x5 mm Surface Mount Package
Broad Band Performance 530 GHz
Low Conversion Loss of 8 dB
High Image Rejection of 15 20 dB
Good 3rd Order Intercept of
+18 dBm
Single -1V, no current Supply Bias
Applications
Microwave Radio Systems
Satellite VSAT, DBS Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access
(including 802.16 and 802.20
WiMax)
WLL and MMDS loops
Commercial grade military
Absolute Maximum Ratings[1]
Symbol Parameters/Conditions
Units Min. Max.
Vg Gate Supply Voltage
V 0 -3
Pin CW Input Power
dBm 15
Tch Operating Channel Temperature
°C
+150
Tstg Storage Case Temperature
°C -65 +150
Tmax Max. Assembly Temp (60 sec max) °C
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.





 AMMP-6530
AMMP-6530 DC Specifications/Physical Properties[1]
Symbol Parameters and Test Conditions
Ig Gate Supply Current (under any RF power drive and temperature)
Vg Gate Supply Operating Voltage
Note:
1. Ambient operational temperature TA=25°C unless otherwise noted.
Units
mA
V
Typ.
0
-1V
www.DataSheet4U.com
AMMP-6530 Typical Performance [2, 3] (TA= 25°C, Vg= -1V, IF frequency = 1 GHz, Zo=50 )
Symbol
Parameters and Test Conditions
Units
Gate Pumped
Drain Pumped
FRF RF Frequency Range
FLO LO Frequency Range
FIF IF Frequency Range
GHz 5 30
GHz 5 30
GHz DC 5
5 30
5 30
DC 5
Down Conversion Up Conversion Down Conversion
PLO LO Port Pumping Power
CG RF to IF Conversion Gain
dBm >10
dB -10
RL_RF
RF Port Return Loss
dB 5
RL_LO
LO Port Return Loss
dB 10
RL_IF
IF Port Return Loss
dB 10
IR Image Rejection Ratio
dB 15
LO-RF Iso.
LO to RF Port Isolation
dB 22
LO-IF Iso.
LO to IF Port Isolation
dB 25
RF-IF Iso.
RF to IF Port Isolation
dB 15
IIP3 Input IP3, Fdelta=100 MHz,
Prf = -10 dBm, Plo = 15 dBm
dBm 18
P-1 Input Port Power at 1dB gain
compression point, Plo=+10 dBm
dBm 8
NF Noise Figure
dB 10
Notes:
2. Small/Large signal data measured in a fully de-embedded test fixture form TA = 25°C.
3. Specifications are derived from measurements in a 50test environment.
>0 >10
-15 -8
5 10
10 5
10 10
15 15
25 22
25 25
15 15
10
0
12
AMMP-6530 RF Specifications in Drain Pumped Test Configuration[4, 5, 6, 7]
(TA= 25°C, Vg= -1.0V, PLO= +10 dBm, Zo = 50 )
Symbol Parameters and Test Conditions
Units Typ.
Sigma
CG Conversion Gain
dB -8
0.5
IR Image Rejection Ratio
dB 20 1.0
Notes:
4. Pre-assembly into package performance verified 100% on-wafer.
5. 100% on-wafer RF testing is done at RF frequency = 7, 18, and 28 GHz; IF frequency = 2 GHz.
6. This final package part performance is verified by a functional test correlated to actual performance.
7. The external 90 degree hybrid coupler is from M/A-COM: PN 2032-6344-00. Frequency 1.02.0 GHz.
2





 AMMP-6530
AMMP-6530 Typical Performance under Gate Pumped Down Conversion Operation
(TA = 25°C, Vg = -1V, Zo = 50)
RF
8
drain
NC
7
Vg
6
-1V NC
5
IF1
1
NC
2
IF2
3
gate
4
LSB
USB
Note: The external 90° hybrid coupler
is from M/A-COM: PN 2032-6344-00.
Frequency is 1.0 2.0 GHz.
LO
www.DataSheet4U.com
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
5
USB(dB)
LSB(dB)
10 15 20 25
FREQUENCY (GHz)
30
Figure 1. Conversion Gain with IF
terminated for Low Side Conversion
LO=+10 dBm, IF=1 GHz.
20
15
10
5
0
5 10 15 20
FREQUENCY (GHz)
Figure 4. Noise Figure.
LO=+7 dBm, IF=1 GHz.
25
30
3
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
5
USB(dB)
LSB(dB)
10 15 20 25
FREQUENCY (GHz)
30
Figure 2. Conversion Gain with IF
terminated for High Side Conversion
LO=+10 dBm, IF=1 GHz.
25
20
15
10
Plo=10(dBm)
Plo=15(dBm)
5
5 10 15 20 25 30
FREQUENCY (GHz)
Figure 5. Input 3rd Order Intercept Point.
IF=1 GHz.
15
10
5
0
-5
5 10 15 20 25
FREQUENCY (GHz)
Figure 3. RF Port Input Power P-1dB.
LO=+10 dBm, IF=1 GHz.
30
0
-5
-10
-15
-20
-25
-10
-5
0
5 10 15 20
LO POWER (dBm)
Figure 6. Conversion Gain vs. LO Power.
RF=21 GHz (-20 dBm), LO=20 GHz.



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