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K4X56163PI-FG

16Mx16 Mobile DDR SDRAM

Description

K4X56163PI - L(F)E/G 16Mx16 Mobile DDR SDRAM 1. FEATURES VDD/VDDQ = 1.8V/1.8V Double-data-rate architecture; two data transfers per clock cycle Bidirectional data strobe(DQS) Four banks operation Differential clock inputs(CK and CK) MRS cycle with address key programs - CAS Latency ( 2, 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential ...

Samsung semiconductor

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