DatasheetsPDF.com

POWER MOSFET. AP9575GJ Datasheet

DatasheetsPDF.com

POWER MOSFET. AP9575GJ Datasheet






AP9575GJ MOSFET. Datasheet pdf. Equivalent




AP9575GJ MOSFET. Datasheet pdf. Equivalent





Part

AP9575GJ

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP9575GH/J RoHS-compliant Product Advan ced Power Electronics Corp. ▼ Lower G ate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S www.DataSheet4U.com P-CHANNEL ENHANCEM ENT MODE POWER MOSFET D BVDSS RDS(ON) ID -60V 90mΩ -15A Description The TO -252 package is widely preferred for co mmercial-industrial surface mount appli cations and suited for lo.
Manufacture

Advanced Power Electronics

Datasheet
Download AP9575GJ Datasheet


Advanced Power Electronics AP9575GJ

AP9575GJ; w voltage applications such as DC/DC con verters. The through-hole version (AP95 75GJ) is available for low-profile appl ications. G D S G D S TO-252(H) TO-25 1(J) Absolute Maximum Ratings Symbol V DS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@ TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Dr ain Current, VGS @ 10V P.


Advanced Power Electronics AP9575GJ

ulsed Drain Current 1 Rating -60 +25 -1 5 -9.5 -45 31.3 -55 to 150 -55 to 150 Units V V A A A W ℃ ℃ Total Power Dissipation Storage Temperature Range O perating Junction Temperature Range Th ermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, J unction-case Maximum Thermal Resistance , Junction-ambient (PCB mount) 3 Value 4.0 62.5 110 Units ℃.


Advanced Power Electronics AP9575GJ

/W ℃/W ℃/W Maximum Thermal Resistan ce, Junction-ambient Data and specific ations subject to change without notice 1 200902093 AP9575GH/J Electrical Ch aracteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Paramet er Drain-Source Breakdown Voltage Stati c Drain-Source On-Resistance2 Test Cond itions VGS=0V, ID=-250uA VGS=-10V, ID=- 12A VGS=-4.5V, ID=-9A .

Part

AP9575GJ

Description

P-CHANNEL ENHANCEMENT MODE POWER MOSFET



Feature


AP9575GH/J RoHS-compliant Product Advan ced Power Electronics Corp. ▼ Lower G ate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S www.DataSheet4U.com P-CHANNEL ENHANCEM ENT MODE POWER MOSFET D BVDSS RDS(ON) ID -60V 90mΩ -15A Description The TO -252 package is widely preferred for co mmercial-industrial surface mount appli cations and suited for lo.
Manufacture

Advanced Power Electronics

Datasheet
Download AP9575GJ Datasheet




 AP9575GJ
Advanced Power
Electronics Corp.
AP9575GH/J
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
G
D
S
www.DaDtaeShsecetr4Uip.cotimon
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9575GJ) is
available for low-profile applications.
BVDSS
RDS(ON)
ID
-60V
90mΩ
-15A
GD
S TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
-60
+25
-15
-9.5
-45
31.3
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.0
62.5
110
Units
V
V
A
A
A
W
Units
/W
/W
/W
Data and specifications subject to change without notice
1
200902093




 AP9575GJ
AP9575GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
VGS=0V, ID=-250uA
VGS=-10V, ID=-12A
VGS=-4.5V, ID=-9A
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-9A
IDSS
Drain-Source Leakage Current
VDS=-60V, VGS=0V
www.DataSheet4U.coDmrain-Source Leakage Current (Tj=125oC) VDS=-48V, VGS=0V
IGSS Gate-Source Leakage
Qg Total Gate Charge2
VGS= +25V, VDS=0V
ID=-9A
Qgs Gate-Source Charge
VDS=-48V
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
td(on)
Turn-on Delay Time2
VDS=-30V
tr Rise Time
ID=-9A
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
tf Fall Time
RD=3.3Ω
Ciss Input Capacitance
VGS=0V
Coss Output Capacitance
VDS=-25V
Crss
Reverse Transfer Capacitance
f=1.0MHz
-60 - - V
- - 90 m
- - 120 m
-1 - -3 V
- 14 -
S
- - -10 uA
- - -250 uA
- - +100 nA
- 14 27 nC
- 3 - nC
- 8 - nC
- 8 - ns
- 17 - ns
- 36 - ns
- 41 - ns
- 1100 2660 pF
- 115 - pF
- 90 - pF
Source-Drain Diode
Symbol
Parameter
VSD Forward On Voltage2
trr Reverse Recovery Time2
Qrr Reverse Recovery Charge
Test Conditions
IS=-9A, VGS=0V
IS=-9A, VGS=0V,
dI/dt=-100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 38 - ns
- 61 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2




 AP9575GJ
50
T C =25 o C
40
30
-10V
-7.0V
-5.0V
-4.5V
20
10 V G =-3.0V
0
0
www.DataSheet4U.com
2468
-V DS , Drain-to-Source Voltage (V)
10
Fig 1. Typical Output Characteristics
100
I D = -9 A
T C =25
90
80
70
60
2 4 6 8 10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
10.0
8.0
6.0
4.0 T j =150 o C
T j =25 o C
2.0
0.0
0 0.2 0.4 0.6 0.8 1 1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
40
TC=150oC
30
20
AP9575GH/J
-10V
-7.0V
-5.0V
-4.5V
10 V G =-3.0V
0
0 2 4 6 8 10 12 14
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I D = - 12 A
1.8 V G = -10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0
50 100 150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50 0 50 100 150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3



Recommended third-party AP9575GJ Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)